? semiconductor components industries, llc, 2015 may, 2015 ? rev. 1 1 publication order number: NSM4002MR6/d NSM4002MR6 dual npn transistors for driving leds NSM4002MR6 contains a single two npn transistors. the base of the q2 npn transistor is internally connected to the collector of the q1 npn transistor. this device is designed to replace a discrete solution that is common for providing a constant current by integrating these two components into a single device. NSM4002MR6 is housed in a sc?74 package which is ideal for surface mount applications in space constrained applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? led lighting ? driver circuits maximum ratings q 1 (t a = 25 c) rating symbol value unit collector ?emitter voltage v ceo 40 vdc collector ?base voltage v cbo 60 vdc emitter ?base voltage v ebo 6.0 vdc collector current ? continuous i c 200 madc maximum ratings q 2 (t a = 25 c) rating symbol value unit collector ?emitter voltage v ceo 45 vdc collector ?base voltage v cbo 50 vdc emitter ?base voltage v ebo 5.0 vdc collector current ? continuous i c 500 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics rating symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 260 2.08 mw mw/ c thermal resistance, junction?to?ambient r ja (note 1) 480 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja (note 2) 416 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr? 4, 100 mm 2 , 2 oz. cu. 2. fr? 4, 500 mm 2 , 2 oz. cu. www. onsemi.com device package shipping ? ordering information sc?74 case 318f 1 2 4 dual npn transistors for driving leds 3 5 6 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. marking diagram NSM4002MR6t1g sc?74 (pb?free) 3000 / tape & reel 1am m 1am = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 1 23 654 q1 q2 123 6, 5 4 q1 q2
NSM4002MR6 www. onsemi.com 2 table 1. electrical characteristics q 1 (t a = 25 c, unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? vdc emitter?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc collector cutoff current (v ce = 30 vdc, v eb(off) = 3.0 vdc) i cex ? 50 nadc base cutoff current (v ce = 30 vdc, v eb(off) = 3.0 vdc) i bl ? 50 nadc on characteristics dc current gain (note 3) (i c = 100 a, v ce = 1.0 v) (i c = 1.0 ma, v ce = 1.0 v) (i c = 10 ma, v ce = 1.0 v) (i c = 50 ma, v ce = 1.0 v) (i c = 100 ma, v ce = 1.0 v) h fe 40 70 100 60 30 ? ? 300 ? ? collector?emitter saturation voltage (note 3) (i c = 10 ma, i b = 1.0 ma) (i c = 50 ma, i b = 5.0 ma) v ce(sat) ? ? 0.20 0.30 v base?emitter saturation voltage (note 3) (i c = 10 ma, i b = 1.0 ma) (i c = 50 ma, i b = 5.0 ma) v be(sat) 0.65 ? 0.85 0.95 v cutoff frequency (i c = 10 ma, v ce = 20 v, f = 100 mhz) f t 300 ? mhz output capacitance (v cb = 5.0 v, f = 1.0 mhz) c obo ? 4.0 pf input capacitance (v eb = 0.5 v, f = 1.0 mhz) c obo ? 8.0 pf table 2. electrical characteristics q 2 (t a = 25 c, unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 45 ? ? vdc collector?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 50 ? ? vdc emitter?base breakdown voltage (i e = 1.0 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector cutoff current (v cb = 20 vdc, i e = 0) i cbo ? ? 0.1 adc on characteristics dc current gain (note 3) (i c = 100 ma, v ce = 1.0 v) (i c = 500 ma, v ce = 1.0 v) h fe 250 40 ? ? 600 ? collector emitter saturation voltage (note 3) (i c = 500 ma, i b = 50 ma) v ce(sat) ? ? 0.7 v base emitter turn?on voltage (note 3) (i c = 500 ma, v ce = 1.0 v) v be(on) ? ? 1.2 v cutoff frequency (i c = 10 ma, v ce = 5.0 v, f = 100 mhz f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz c obo ? 10 ? pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulsed condition: pulse width = 300 msec, duty cycle 2%.
NSM4002MR6 www. onsemi.com 3 application section introduction the NSM4002MR6 is designed to be used as a constant current driver for leds. the two resistors in figure 1 are external from the NSM4002MR6 to allow for customization. r set controls the current through the load, and r 1 controls the bias current. figure 1. typical application schematic selecting r set the r set resistor is used to set the driving current of the load. it is connected across the base?emitter junction of q1. this v be voltage is what sets up the constant voltage across the r set resistor. figure 5 gives the typical values of v be based on the biasing current. to determine the r set value simply divide the v be voltage by the desired driving current. selecting r 1 the r 1 resistor is used to set the biasing current. the biasing current is split between the base of q2 and the collector of q1. when desiring the lowest overhead voltage r 1 should be set as high as possible. it is important to ensure it is not set too high so that q2 falls out of saturation. however, a lower r 1 value will drive more current through q1. this will reduce the change in the driving current as temperature is increased. it will also allow a higher driving current to be achieved while maintaining good current regulation. the side affect of a lower r 1 value is that it reduces the overall efficiency because more power is being used in the driving circuit. input votlage, v s the maximum input voltage, v s , is determined by the load. no more than 45 v can be applied across q2. this leads to: v s(max) v load 45 v (eq. 1) overhead voltage the overhead voltage of this device to reach full current regulation is the combination of the v be voltages of the two transistors. under typical conditions this overhead voltage will typically be 1.4 v.
NSM4002MR6 www. onsemi.com 4 typical characteristics ? q1 figure 2. dc current gain i c , collector current (ma) 10 100 1000 0.1 h , dc current gain 10 1 100 1.0 1000 fe v ce = 1.0 v t j = +150 c +25 c -55 c figure 3. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma
NSM4002MR6 www. onsemi.com 5 typical characteristics ? q1 figure 4. collector emitter saturation voltage vs. collector current figure 5. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.6 0.7 0.8 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 6. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 0.5 i c /i b = 10 150 c 25 c ?55 c i c /i b = 10 150 c 25 c ?55 c v ce = 1 v 150 c 25 c ?55 c figure 7. temperature coefficients i c , collector current (ma) -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat)
NSM4002MR6 www. onsemi.com 6 typical characteristics ? q2 figure 8. dc current gain vs. collector current figure 9. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 1 0.1 0.01 0.001 0.01 0.1 1 figure 10. base emitter saturation voltage vs. collector current figure 11. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 i c /i b = 10 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c i b , base current (ma) figure 12. saturation region v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 t j = 25 c i c = 10 ma 100 ma 300 ma 500 ma
NSM4002MR6 www. onsemi.com 7 package dimensions sc?74 case 318f?05 issue n 23 4 5 6 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f?01, ?02, ?03 obsolete. new standard 318f?04. c l h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.37 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.015 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? l 0 10 0 10 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NSM4002MR6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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